The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2015
Filed:
Nov. 19, 2013
Applicant:
Infineon Technologies Austria Ag, Villach, AT;
Inventors:
Franz Hirler, Isen, DE;
Thoralf Kautzsch, Dresden, DE;
Anton Mauder, Kolbermoor, DE;
Michael Rueb, Faak am See, AT;
Hans-Joachim Schulze, Taufkirchen, DE;
Helmut Strack, Munich, DE;
Armin Willmeroth, Augsburg, DE;
Assignee:
Infineon Technologies Austria AG, Villach, AT;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/762 (2006.01); H01L 21/324 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 21/3247 (2013.01); H01L 29/0653 (2013.01); H01L 29/407 (2013.01); H01L 29/66621 (2013.01); H01L 29/7803 (2013.01); H01L 29/7804 (2013.01);
Abstract
A semiconductor device, in which a first trench section is produced proceeding from a surface of a semiconductor body into the semiconductor body. A semiconductor layer is produced above the surface and above the first trench section. A further trench section is produced in the semiconductor layer in such a way that the first trench section and the further trench section form a continuous trench structure.