The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 25, 2015

Filed:

Apr. 21, 2014
Applicant:

United Test and Assembly Center Ltd., Singapore, SG;

Inventors:

Chin Hock Toh, Singapore, SG;

Kriangsak Sae Le, Johor, MY;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/331 (2006.01); H01L 21/8222 (2006.01); H01L 23/495 (2006.01); H01L 21/56 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01); H01L 25/18 (2006.01); H01L 23/14 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49503 (2013.01); H01L 21/561 (2013.01); H01L 23/3135 (2013.01); H01L 24/89 (2013.01); H01L 24/97 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 21/563 (2013.01); H01L 23/147 (2013.01); H01L 23/3128 (2013.01); H01L 23/49827 (2013.01); H01L 24/06 (2013.01); H01L 24/16 (2013.01); H01L 24/73 (2013.01); H01L 24/81 (2013.01); H01L 24/83 (2013.01); H01L 24/92 (2013.01); H01L 25/18 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/06135 (2013.01); H01L 2224/131 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16235 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/814 (2013.01); H01L 2224/81024 (2013.01); H01L 2224/8191 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81424 (2013.01); H01L 2224/81444 (2013.01); H01L 2224/81447 (2013.01); H01L 2224/81455 (2013.01); H01L 2224/81464 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/83102 (2013.01); H01L 2224/92125 (2013.01); H01L 2224/97 (2013.01); H01L 2225/0652 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06548 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01075 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/157 (2013.01); H01L 2924/15165 (2013.01); H01L 2924/15311 (2013.01);
Abstract

A method of forming semiconductor assemblies is disclosed. The method includes providing an interposer with through interposer vias. The interposer includes a first surface and a second surface. The through interposer vias extend from the first surface to the second surface of the interposer. A first die is mounted on the first surface of the interposer. The first die comprises a first surface with first conductive contacts thereon. The interposer comprises material with coefficient of thermal expansion (CTE) similar to that of the first die. The first conductive contacts of the first die are coupled to the through interposer vias on the first surface of the interposer.


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