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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9117764 B1

PDFFull Text
Expired
Date of Patent:
Aug. 25, 2015

Filed:

Jul. 29, 2011

Etching method, substrate processing method, pattern forming method, method for manufacturing semiconductor element, and semiconductor element

Applicants:

Takaaki Matsuoka, Tokyo, JP;

Toshihisa Nozawa, Miyagi, JP;

Toshiyasu Hori, Miyagi, JP;

Inventors:

Takaaki Matsuoka, Tokyo, JP;

Toshihisa Nozawa, Miyagi, JP;

Toshiyasu Hori, Miyagi, JP;

Assignee:

TOKYO ELECTRON LIMITED, Tokyo, JP;

Attorney:

Rothwell, Figg, Ernst & Manbeck, P.C.

Primary Examiner:

Savitr Mulpuri

Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/308 (2006.01); H01J 37/32 (2006.01); H01L 21/02 (2006.01); H01L 21/027 (2006.01); H01L 21/311 (2006.01); G03F 7/004 (2006.01); G03F 7/075 (2006.01); G03F 7/09 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3081 (2013.01); G03F 7/0046 (2013.01); G03F 7/0752 (2013.01); G03F 7/094 (2013.01); G03F 7/2041 (2013.01); H01J 37/32192 (2013.01); H01L 21/0212 (2013.01); H01L 21/0276 (2013.01); H01L 21/02274 (2013.01); H01L 21/3086 (2013.01); H01L 21/31122 (2013.01);
Abstract

A fluorocarbon layer is formed on a silicon substrate that is a to-be-processed substrate (step A). A resist layer is formed on the thus-formed fluorocarbon layer (step B). Then, the resist layer is patterned into a predetermined shape by exposing the resist layer to light by means of a photoresist layer (step C). The fluorocarbon layer is etched using the resist layer, which has been patterned into a predetermined shape, as a mask (step D). Next, the resist layer served as a mask is removed (step E). After that, the silicon substrate is etched using the remained fluorocarbon layer as a mask (step F). Since the fluorocarbon layer by itself functions as an antireflective film and a harm mask, the reliability of processing can be improved, while reducing the cost.

Find Patent Forward Citations

Matsuoka, Takaaki. (2015). Etching method, substrate processing method, pattern forming method, method for manufacturing semiconductor element, and semiconductor element (U.S. Patent No. 9117764). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9117764

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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