The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2015
Filed:
Aug. 10, 2011
Sanjeev Sapra, Boise, ID (US);
Cheng-shun Chen, Boise, ID (US);
Hung-ming Tsai, Boise, ID (US);
Sheng-wei Yang, Boise, ID (US);
Sanjeev Sapra, Boise, ID (US);
Cheng-Shun Chen, Boise, ID (US);
Hung-Ming Tsai, Boise, ID (US);
Sheng-Wei Yang, Boise, ID (US);
MICRON TECHNOLOGY, INC., Boise, ID (US);
Abstract
A method of creating a trench having a portion of a bulb-shaped cross-section in silicon is disclosed. The method comprises forming at least one trench in silicon and forming a liner in the at least one trench. The liner is removed from a bottom surface of the at least one trench to expose the underlying silicon. A portion of the underlying exposed silicon is removed to form a cavity in the silicon. At least one removal cycle is conducted to remove exposed silicon in the cavity to form a bulb-shaped cross-sectional profile, with each removal cycle comprising subjecting the silicon in the cavity to ozonated water to oxidize the silicon and subjecting the oxidized silicon to a hydrogen fluoride solution to remove the oxidized silicon. A semiconductor device structure comprising the at least one trench comprising a cavity with a bulb-shaped cross-sectional profile is also disclosed.