The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2015
Filed:
Oct. 01, 2013
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Yoshitaka Yokota, San Jose, CA (US);
Norman L. Tam, San Jose, CA (US);
Balasubramanian Ramachandran, Santa Clara, CA (US);
Martin John Ripley, San Jose, CA (US);
Assignee:
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/316 (2006.01); H01L 21/32 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02238 (2013.01); H01L 21/0223 (2013.01); H01L 21/02255 (2013.01); H01L 21/28247 (2013.01); H01L 21/31662 (2013.01); H01L 21/32 (2013.01);
Abstract
A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and barrier layers, in the substrate are not oxidized.