The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2015
Filed:
Jun. 01, 2012
Feng Zhou, Austin, TX (US);
Frank K. Baker, Jr., Austin, TX (US);
Ko-min Chang, Austin, TX (US);
Cheong Min Hong, Austin, TX (US);
Feng Zhou, Austin, TX (US);
Frank K. Baker, Jr., Austin, TX (US);
Ko-Min Chang, Austin, TX (US);
Cheong Min Hong, Austin, TX (US);
FREESCALE SEMICONDUCTOR, INC., Austin, TX (US);
Abstract
A resistive random access memory (ReRAM) cell, comprising a first conductive electrode and a dielectric storage material layer over the first conductive electrode. The dielectric storage material layer is conducive to the formation of conductive filaments during the application of a filament forming voltage to the cell. The cell includes a second conductive electrode over the dielectric storage material layer and an interface region comprising a plurality of interspersed field focusing features that are not photo-lithographically defined. The interface region is located between the first conductive electrode and the dielectric storage material layer or between the dielectric storage material layer and the second conductive electrode.