The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2015
Filed:
Dec. 14, 2012
Intermolecular, Inc., San Jose, CA (US);
Teresa B. Sapirman, San Jose, CA (US);
Philip A. Kraus, San Jose, CA (US);
Sang M. Lee, San Jose, CA (US);
Haifan Liang, Fremont, CA (US);
Jeroen Van Duren, Palo Alto, CA (US);
Intermolecular, Inc., San Jose, CA (US);
Abstract
In some embodiments, Cu—In—Ga precursor films are deposited by co-sputtering from multiple targets. Specifically, the co-sputtering method is used to form layers that include In. The co-sputtering reduces the tendency for the In component to agglomerate and results in smoother, more uniform films. In some embodiments, the Ga concentration in one or more target(s) is between about 25 atomic % and about 66 atomic %. The deposition may be performed in a batch or in-line deposition system. If an in-line deposition system is used, the movement of the substrates through the system may be continuous or may follow a 'stop and soak' method of substrate transport.