The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2015
Filed:
Nov. 04, 2013
Applicant:
United Microelectronics Corp., Hsin-Chu, TW;
Inventors:
Chin-I Liao, Tainan, TW;
Chun-Yu Chen, Taichung, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/785 (2013.01); H01L 29/16 (2013.01); H01L 29/66795 (2013.01);
Abstract
An epitaxial structure for a non-planar transistor is provided. A substrate has a fin-shaped structure. A gate is disposed across the fin-shaped structure. A silicon germanium epitaxial structure is disposed on the fin-shaped structure beside the gate, wherein the silicon germanium epitaxial structure has 4 <1,1,1> surfaces and its aspect ratio of width and thickness is at a range of 1:1˜1.3. A method for forming said epitaxial structure is also provided.