The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2015

Filed:

Jul. 30, 2012
Applicants:

Lavy Shavit, Jerusalem, IL;

Rafi Kraus, Holon, IL;

Itzak Yair, Ramat Ishai, IL;

Samuel Nackash, Nes-Ziona, IL;

Yuri Belenky, Rishon Lezion, IL;

Inventors:

Lavy Shavit, Jerusalem, IL;

Rafi Kraus, Holon, IL;

Itzak Yair, Ramat Ishai, IL;

Samuel Nackash, Nes-Ziona, IL;

Yuri Belenky, Rishon Lezion, IL;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); F27D 13/00 (2006.01); F27B 5/18 (2006.01); F27B 17/00 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67248 (2013.01); F27D 13/00 (2013.01); H01L 21/67098 (2013.01); H01L 21/67103 (2013.01); H01L 21/67115 (2013.01); F27B 5/18 (2013.01); F27B 17/0025 (2013.01);
Abstract

A semiconductor wafer is received at a first chamber that is at a first pressure level. The semiconductor wafer is at a first temperature and is heated, by a first heating module, to a second temperature while the pressure level of the first chamber is reduced from the first pressure level to a second pressure level. The semiconductor wafer is then provided to a supporting element of a second chamber which maintains a third pressure level that is closer to the second pressure level than to the first pressure level; the supporting element being at a third temperature that is closer to the second temperature than to the first temperature.


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