The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2015
Filed:
Nov. 12, 2012
Shin-etsu Handotai Co., Ltd., Tokyo, JP;
Ryoji Hoshi, Nishigo-mura, JP;
Hiroyuki Kamada, Nishigo-mura, JP;
Suguru Matsumoto, Nishigo-mura, JP;
SHIN-ETSU HANDOTAI CO., LTD., Tokyo, JP;
Abstract
The present invention provides a method for evaluating silicon single crystal wherein an amount Δ[C] of carriers generated due to oxygen donors produced when a heat treatment is performed to the silicon single crystal is calculated and evaluated, the amount Δ[C] being calculated from oxygen concentration [Oi] in the silicon single crystal, a temperature T of the heat treatment, a time t of the heat treatment, and an oxygen diffusion coefficient D(T) at the temperature T by using the following relational expression:Δ[C]=α[Oi]×exp(−β·D(T)·[Oi]·t)