The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 18, 2015
Filed:
Mar. 28, 2014
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Dongjiang Wang, Shanghai, CN;
Steven Zhang, Shanghai, CN;
Abstract
A method is provided for fabricating a semiconductor structure. The method includes providing a to-be-etched layer; and forming a hard mask layer on the to-be-etched layer. The method also includes forming a photoresist layer on the hard mask layer; and forming a patterned photoresist layer having openings exposing the hard mask layer by exposing and developing the photoresist layer. Further, the method includes forming sidewall spacers on side surfaces of the openings; and forming a patterned hard mask layer by etching the hard mask layer using the patterned photoresist layer and the sidewall spacers as an etching mask such that patterns in the hard mask layer have a substantially right angle at edge. Further, the method also includes forming to-be-etched patterns by etching the to-be-etched layer based on the patterned hard mask layer.