The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2015

Filed:

Apr. 12, 2011
Applicants:

Hans-jürgen Mann, Oberkochen, DE;

Alois Herkommer, Aalen, DE;

Inventors:

Hans-Jürgen Mann, Oberkochen, DE;

Alois Herkommer, Aalen, DE;

Assignee:

Carl Zeiss SMT GmbH, Oberkochen, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 17/06 (2006.01); G02B 5/10 (2006.01); G02B 5/08 (2006.01); G03F 1/84 (2012.01); G02B 19/00 (2006.01); G03F 1/24 (2012.01);
U.S. Cl.
CPC ...
G02B 5/10 (2013.01); G02B 5/0891 (2013.01); G02B 17/0626 (2013.01); G02B 19/0023 (2013.01); G02B 19/0047 (2013.01); G02B 19/0095 (2013.01); G03F 1/84 (2013.01); G03F 1/24 (2013.01);
Abstract

A metrology system serves to examine an object arranged in an object field using EUV illumination light. An illumination optics of the metrology system has a collector mirror which is arranged in the beam path directly downstream of an EUV light source. Downstream of the collector mirror, less than three additional illumination mirrors are arranged in the beam path between the collector mirror and the object field. An intermediate focus is arranged in the beam path between the collector mirror and the additional illumination mirror. The metrology system further includes a magnifying imaging optics for imaging the object field into an image field in an image plane. As a result a metrology system is obtained which comprises an illumination optics that ensures an efficient illumination of the object field by means of illumination parameters which are well adapted to the illumination situation of current EUV projection exposure apparatuses.


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