Wafer dicing method for improving die packaging quality

Abstract

In embodiments, a hybrid wafer or substrate dicing process involving an initial laser scribe and subsequent plasma etch is implemented for die singulation while also removing an oxidation layer from metal bumps on the wafer. In one embodiment, a method includes forming a mask over the semiconductor wafer covering the plurality of ICs, the plurality of ICs including metal bumps or pads with an oxidation layer. The method includes patterning the mask with a laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the ICs. The method includes plasma etching the semiconductor wafer through the gaps in the patterned mask to singulate the plurality of ICs and remove the oxidation layer from the metal bumps or pads.