The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2015
Filed:
Aug. 15, 2013
United Microelectronics Corporation, Hsinchu, TW;
Hung-Lin Shih, Hsinchu, TW;
Chih-Chien Liu, Taipei, TW;
Jei-Ming Chen, Tainan, TW;
Wen-Yi Teng, Kaohsiung, TW;
Chieh-Wen Lo, Tainan, TW;
United Microelectronics Corporation, Hsinchu, TW;
Abstract
A method of fabricating a spatial semiconductor structure includes steps as follows. Firstly, a semiconductor substrate is provided. Then, a first mask layer is formed above the semiconductor substrate. Then, at least a first opening is formed in the first mask layer and exposes a portion of a surface of the semiconductor substrate. Then, a first semiconductor pattern is formed in the first opening. Then, a second mask layer is formed over the first semiconductor pattern and the first mask layer. Then, at least a second opening is formed through the second mask layer to the first mask layer and exposes another portion of the surface of the semiconductor substrate. And, a second semiconductor pattern is formed in the second opening.