The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2015
Filed:
May. 31, 2013
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Jin-seong Heo, Seoul, KR;
Seong-jun Park, Seoul, KR;
Kyung-eun Byun, Uijeongbu-si, KR;
David Seo, Yongin-si, KR;
Hyun-jae Song, Hwaseong-si, KR;
Jae-ho Lee, Seoul, KR;
Hyun-jong Chung, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
According to example embodiments, a tunneling field-effect transistor (TFET) includes a first electrode on a substrate, a semiconductor layer on a portion of the first electrode, a graphene channel on the semiconductor layer, a second electrode on the graphene channel, a gate insulating layer on the graphene channel, and a gate electrode on the gate insulating layer. The first electrode may include a portion that is adjacent to the first area of the substrate. The semiconductor layer may be between the graphene channel and the portion of the first electrode. The graphene channel may extend beyond an edge of at least one of the semiconductor layer and the portion of the first electrode to over the first area of the substrate.