The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 2015
Filed:
Apr. 01, 2010
Shifang LI, Pleasanton, CA (US);
Manuel Madriaga, San Jose, CA (US);
Shifang Li, Pleasanton, CA (US);
Manuel Madriaga, San Jose, CA (US);
Tokyo Electron Limited, Tokyo, JP;
Abstract
Provided is a method for controlling a fabrication cluster using an optical metrology system that includes an optical metrology tool, an optical metrology model, and a profile extraction algorithm. The method comprises: selecting a number of rays for the illumination beam, selecting beam propagation parameters, using a processor, determining beam propagation parameters from the light source of the to the sample structure, determining the beam propagation parameters from the sample structure to the detector, calculating intensity and polarization of each ray on the detector, generating a total intensity and polarization of the diffraction beam, calculating a metrology output signal from the total intensity and polarization, extracting the one or more profile parameters using the metrology output signal, transmitting at least one profile parameter to a fabrication cluster, and adjusting at least one process parameter or equipment setting of the fabrication cluster.