The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2015

Filed:

Mar. 25, 2013
Applicant:

Adesto Technologies Corporation, Sunnyvale, CA (US);

Inventors:

Chakravarthy Gopalan, Santa Clara, CA (US);

Wei Ti Lee, San Jose, CA (US);

Yi Ma, Santa Clara, CA (US);

Jeffrey Allan Shields, Sunnyvale, CA (US);

Assignee:

Adesto Technologies Corporation, Sunnyvale, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/04 (2013.01); H01L 45/085 (2013.01); H01L 45/1233 (2013.01); H01L 45/1266 (2013.01); H01L 45/142 (2013.01); H01L 45/143 (2013.01); H01L 45/1608 (2013.01); H01L 45/1625 (2013.01);
Abstract

A memory element can include a first electrode; a second electrode; and a memory material programmable between different resistance states, the memory material disposed between the first electrode and the second electrode and comprising a solid electrolyte with at least one modifier element formed therein; wherein the first electrode is an anode electrode that includes an anode element that is ion conductible in the solid electrolyte, the anode element being different than the modifier element.


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