The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2015

Filed:

Aug. 25, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Joonsoo Park, Seongnam-si, KR;

Soonmok Ha, Hwaseong-si, KR;

Eunshoo Han, Gyeonggi-do, KR;

Seongho Moon, Yongin-si, KR;

Sung-Wook Hwang, Seongnam-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30604 (2013.01); H01L 21/3086 (2013.01); H01L 21/3088 (2013.01); H01L 21/31111 (2013.01);
Abstract

Methods of forming fine patterns for semiconductor devices are provided. A method may include sequentially forming a lower layer and a mask layer having first openings on a substrate, forming pillars to fill the first openings and protrude upward from a top surface of the mask layer, forming a block copolymer layer on the substrate with the pillars, performing a thermal treatment to the block copolymer layer to form a first block portion and second block portions, removing the second block portions to form guide openings exposing the mask layer, and etching the mask layer exposed by the guide openings to form second openings.


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