The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2015

Filed:

Jul. 17, 2014
Applicant:

Ims Nanofabrication Ag, Vienna, AT;

Inventor:

Elmar Platzgummer, Vienna, AT;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/04 (2006.01); H01J 37/147 (2006.01); H01J 37/317 (2006.01);
U.S. Cl.
CPC ...
H01J 37/045 (2013.01); H01J 37/147 (2013.01); H01J 37/3177 (2013.01); H01J 2237/0435 (2013.01);
Abstract

A pattern definition (PD) device for use in a charged-particle multi-beam processing or inspection apparatus includes at least two deflection array devices positioned in a stacked arrangement. A particle beam (Ib) traversing the PD device is formed into a plurality of beamlets, which can be deflected or blanked by the two deflection array devices. Each deflection array device comprises a plurality of blanking openings allowing passage of beamlets, and a plurality of deflecting devices, each deflecting device being associated with a respective blanking opening and comprising an electrostatic electrode. The deflecting devices are selectively activatable and configured to influence, when activated, the beamlets traversing said respective blanking openings so as to deflect said beamlets off their nominal paths. Each deflection array device is configured to act on only respective subsets of beamlets by selectively deflecting them, while allowing the other beamlets to traverse the respective deflection array device without deflection.


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