The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2015
Filed:
Mar. 09, 2012
Jin-aun NG, Hsinchu, TW;
Po-nien Chen, Miaoli, TW;
Sheng-chen Chung, Jhubei, TW;
Bao-ru Young, Zhubei, TW;
Hak-lay Chuang, Singapore, SG;
Jin-Aun Ng, Hsinchu, TW;
Po-Nien Chen, Miaoli, TW;
Sheng-Chen Chung, Jhubei, TW;
Bao-Ru Young, Zhubei, TW;
Hak-Lay Chuang, Singapore, SG;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A process fabricating a semiconductor device with a hybrid HK/metal gate stack fabrication is disclosed. The process includes providing a semiconductor substrate having a plurality of isolation features between a PFET region and a NFET region, and forming gate stacks on the semiconductor substrate. In the PFET region, the gate stack is formed as a HK/metal gate. In the NFET region, the gate stack is formed as a polysilicon gate. A high-resistor is also formed on the semiconductor substrate by utilizing another polysilicon gate.