The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2015
Filed:
Dec. 11, 2013
United Microelectronics Corp., Hsin-Chu, TW;
Yu-Ting Li, Chiayi, TW;
Po-Cheng Huang, Kaohsiung, TW;
Wu-Sian Sie, Tainan, TW;
Chun-Hsiung Wang, Kaohsiung, TW;
Yi-Liang Liu, Tainan, TW;
Chia-Lin Hsu, Tainan, TW;
Rai-Min Huang, Taipei, TW;
UNITED MICROELECTRONICS CORP., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A method of fabricating a semiconductor device includes the following steps. A substrate including at least a fin structure is provided, and a material layer is formed to cover the fin structure. Then, a first planarization process is performed on the material layer to form a first material layer, and an oxide layer is formed on the first material layer. Subsequently, the oxide layer is totally removed to expose the first material layer, and a second material layer is formed in-situ on the first material layer after totally removing the oxide layer.