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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9093373 B1

PDFFull Text
Expired
Date of Patent:
Jul. 28, 2015

Filed:

Aug. 13, 2013

Conductive diffusion barrier structure for ohmic contacts

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Chin-Chia Chang, Zhongli, TW;

Han-Wei Yang, Hsinchu, TW;

Chen-Chung Lai, Guanxi Township, TW;

Kang-Min Kuo, Zhubei, TW;

Bor-Zen Tien, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Attorney:

Eschweiler & Associates, LLC

Primary Examiner:

Nicholas Tobergte

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 27/146 (2006.01); H01L 29/78 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/265 (2013.01); H01L 21/76286 (2013.01); H01L 27/1463 (2013.01); H01L 29/6659 (2013.01); H01L 29/7833 (2013.01);
Abstract

An integrated circuit includes a p-type region formed beneath a surface of a semiconductor substrate, and an n-type region formed beneath the surface of the semiconductor substrate. The n-type region meets the p-type region at a p-n junction. A diffusion barrier structure, which is beneath the surface of the semiconductor substrate and extends along a side of the p-n junction, limits lateral diffusion between the p-type region and n-type region.

Find Patent Forward Citations

Chang, Chin-Chia. (2015). Conductive diffusion barrier structure for ohmic contacts (U.S. Patent No. 9093373). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9093373

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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