The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2015
Filed:
Oct. 04, 2013
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Vishal Sarin, Cupertino, CA (US);
Jung Sheng Hoei, Freemont, CA (US);
Frankie Roohparvar, Monte Sereno, CA (US);
Giulio-Giuseppe Marotta, Contigliano, IT;
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 16/12 (2006.01); G11C 11/56 (2006.01); G11C 16/04 (2006.01); G11C 7/16 (2006.01); G11C 16/28 (2006.01);
U.S. Cl.
CPC ...
G11C 16/12 (2013.01); G11C 11/5642 (2013.01); G11C 16/0483 (2013.01); G11C 7/16 (2013.01); G11C 16/28 (2013.01); G11C 2211/5621 (2013.01); G11C 2211/5634 (2013.01); G11C 2211/5642 (2013.01);
Abstract
The present disclosure includes methods, devices, modules, and systems for operating memory cells. One method embodiment includes applying a ramping voltage to a control gate of a memory cell and to an analog-to-digital converter (ADC). The aforementioned embodiment of a method also includes detecting an output of the ADC at least partially in response to when the ramping voltage causes the memory cell to trip sense circuitry.