The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2015
Filed:
Jun. 04, 2014
Macronix International Co., Ltd, Hsinchu, TW;
Yu-Jui Chang, Hsinchu, TW;
Cheng-Chi Lin, Toucheng Township, TW;
Shih-Chin Lien, New Taipei, TW;
Shyi-Yuan Wu, Hsinchu, TW;
MACRONIX INTERNATIONAL CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a substrate, an insulation layer disposed over the substrate, covering a drift region, and including a first edge and a second edge opposite to the first edge, a gate layer covering the first edge of the insulation layer, and a metal layer including a metal portion connected to the gate layer and overlapping the first edge of the insulation layer. The metal portion includes a first edge located closer to a central portion of the insulation layer than an opposite second edge of the metal portion. A distance from the first edge of the metal portion to the first edge of the insulation layer along a channel length direction is a. A distance from the first edge of the insulation layer to the second edge of the insulation layer is L. A ratio of a/L is equal to or higher than 0.46.