The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2015

Filed:

Dec. 28, 2009
Applicants:

Sung K. Kang, Armonk, NY (US);

Paul A. Lauro, Armonk, NY (US);

Minhua LU, Armonk, NY (US);

Da-yuan Shih, Armonk, NY (US);

Inventors:

Sung K. Kang, Armonk, NY (US);

Paul A. Lauro, Armonk, NY (US);

Minhua Lu, Armonk, NY (US);

Da-Yuan Shih, Armonk, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/44 (2006.01); H01L 23/498 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49811 (2013.01); H01L 24/05 (2013.01); H01L 24/81 (2013.01); H01L 24/03 (2013.01); H01L 24/13 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05562 (2013.01); H01L 2224/05564 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/11849 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/16503 (2013.01); H01L 2924/0002 (2013.01); H01L 2924/00013 (2013.01); H01L 2924/0103 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/0109 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01021 (2013.01); H01L 2924/01023 (2013.01); H01L 2924/01024 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01041 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01049 (2013.01); H01L 2924/01051 (2013.01); H01L 2924/01063 (2013.01); H01L 2924/01073 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/01327 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/1461 (2013.01);
Abstract

A process comprises manufacturing an electromigration-resistant under-bump metallization (UBM) flip chip structure comprising a Cu layer by applying to the Cu layer a metallic reaction barrier layer comprising NiFe. The solder employed in the flip chip structure comprise substantially lead-free tin. A structure comprises a product produced by this process. In another embodiment a process comprises manufacturing an electromigration-resistant UBM Sn-rich Pb-free solder bump flip chip structure wherein the electromigration-resistant UBM structure comprises a four-layer structure, or a three-layer structure, wherein the four layer structure is formed by providing 1) an adhesion layer, 2) a Cu seed layer for plating, 3) a reaction barrier layer, and 4) a wettable layer for joining to the solder, and the three-layer structure is formed by providing 1) an adhesion layer, 2) a reaction barrier layer, and 3) a wettable layer. In a further embodiment, the reaction barrier layer comprises metals selected from Ni, Fe, Pd, Pt, Co, Cu and their alloys, and combinations thereof. A structure comprises a product produced by the immediately foregoing process.


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