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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9082705 B1

PDFFull Text
Date of Patent:
Jul. 14, 2015

Filed:

Aug. 03, 2012

Method of forming an embedded memory device

Applicants:

Yu-wei Ting, Taipei, TW;

Kuo-ching Huang, Hsinchu, TW;

Chih-yang Pai, Hsinchu, TW;

Inventors:

Yu-Wei Ting, Taipei, TW;

Kuo-Ching Huang, Hsinchu, TW;

Chih-Yang Pai, Hsinchu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Attorney:

Haynes and Boone, LLP

Primary Examiner:

Mohsen Ahmadi

Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/4763 (2006.01); H01L 21/31 (2006.01); H01L 21/28 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28282 (2013.01); H01L 29/42344 (2013.01); H01L 29/66833 (2013.01); H01L 29/792 (2013.01);
Abstract

The present disclosure describes a method of forming a memory device. The method includes receiving a wafer substrate, forming a poly stack pattern on the wafer substrate, performing an ion implantation process to form a source and a drain in the wafer substrate, forming a memory gate and a control gate in the defined poly stack pattern, and forming a control gate in the control poly stack pattern. Forming the memory gate further includes performing a memory gate recess to bury the memory gate in an oxide layer.

Find Patent Forward Citations

Ting, Yu-Wei. (2015). Method of forming an embedded memory device (U.S. Patent No. 9082705). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9082705

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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