The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2015
Filed:
Feb. 20, 2013
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Yu Lei, Foster City, CA (US);
Srinivas Gandikota, Santa Clara, CA (US);
Xinyu Fu, Fremont, CA (US);
Wei Tang, Santa Clara, CA (US);
Atif Noori, Saratoga, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/28 (2006.01); H01L 29/49 (2006.01); H01L 21/8238 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28008 (2013.01); H01L 21/28088 (2013.01); H01L 21/823842 (2013.01); H01L 21/823857 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01);
Abstract
Provided are devices and methods utilizing TiN and/or TaN films doped with Si, Al, Ga, Ge, In and/or Hf. Such films may be used as a high-k dielectric cap layer, PMOS work function layer, aluminum barrier layer, and/or fluorine barrier. These TiSiN, TaSiN, TiAlN, TaAlN, TiGaN, TaGaN, TiGeN, TaGeN, TiInN, TaInN, TiHfN or TaHfN films can be used where TiN and/or TaN films are traditionally used, or they may be used in conjunction with TiN and/or TaN.