The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2015
Filed:
Dec. 31, 2012
Applicant:
Shangai Huali Microelectronics Corporation, Shanghai, CN;
Inventors:
Qiliang Ni, Shanghai, CN;
Hunglin Chen, Shanghai, CN;
Zhounan Wang, Shanghai, CN;
Yin Long, Shanghai, CN;
Mingsheng Guo, Shanghai, CN;
Assignee:
SHANGAI HUALI MICROELECTRONICS CORPORATION, Shanghai, CN;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01B 11/00 (2006.01); G01B 11/27 (2006.01); H01L 21/66 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
G01B 11/27 (2013.01); H01L 21/28035 (2013.01); H01L 22/30 (2013.01);
Abstract
The present invention is related to the semiconductor manufacturing field, especially a method for monitoring alignment between contact holes and polycrystalline silicon gate by setting a plurality of equidistant contact holes with same sharp on poly-silicon and residual active area, and then obtain the process alignment profile of the quantized values in the plane in order to have a better control of process quality, thereby have a better control of the quality of the process.