The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 14, 2015

Filed:

Nov. 16, 2012
Applicant:

Rohm and Haas Electronic Materials Llc, Marlborough, MA (US);

Inventors:

David Mosley, Philadelphia, PA (US);

David Thorsen, Pitman, NJ (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); C09D 11/03 (2014.01); C09D 11/52 (2014.01); H01L 21/02 (2006.01); H01L 31/032 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
C09D 11/03 (2013.01); C09D 11/52 (2013.01); H01L 21/02422 (2013.01); H01L 21/02568 (2013.01); H01L 21/02628 (2013.01); H01L 31/0322 (2013.01); H01L 45/1608 (2013.01); H01L 45/141 (2013.01); Y02E 10/541 (2013.01);
Abstract

A method for depositing a Group 1b/gallium/(optional indium)/Group 6a material using a gallium formulated ink, comprising, as initial components: (a) a Group 1b/gallium/(optional indium)/Group 6a system which comprises a combination of, as initial components: a gallium component; a selenium component; an organic chalcogenide component; a Group 1b component comprising, as an initial component, at least one of CuCland CuO; optionally, a bidentate thiol component; optionally, an indium component; and, (b) a liquid carrier component; depositing the gallium formulated ink on the substrate; heating the deposited gallium formulated ink to eliminate the gallium carrier, the first liquid carrier, the second liquid carrier and the, optional, third liquid carrier leaving a Group 1b/gallium/(optional indium)/Group 6a material on the substrate; and, optionally, annealing the Group 1b/gallium/(optional indium)/Group 6a material.


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