The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2015
Filed:
Apr. 22, 2013
Applicant:
Mitsubishi Materials Corporation, Tokyo, JP;
Inventors:
Hiroshi Tonomura, Naka-gun, JP;
Takeshi Kitahara, Gotenba, JP;
Hiroya Ishizuka, Koshigaya, JP;
Yoshirou Kuromitsu, Saitama, JP;
Yoshiyuki Nagatomo, Saitama, JP;
Assignee:
MITSUBISHI MATERIALS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B44C 1/22 (2006.01); B23K 1/20 (2006.01); H01L 21/48 (2006.01); H01L 23/15 (2006.01); H01L 23/373 (2006.01); H01L 23/40 (2006.01); H01L 23/473 (2006.01); H05K 3/38 (2006.01); C04B 35/584 (2006.01); C04B 37/02 (2006.01); H05K 1/03 (2006.01); H05K 3/00 (2006.01);
U.S. Cl.
CPC ...
B23K 1/20 (2013.01); C04B 35/584 (2013.01); C04B 37/026 (2013.01); H01L 21/4807 (2013.01); H01L 23/15 (2013.01); H01L 23/3735 (2013.01); H01L 23/4006 (2013.01); H01L 23/473 (2013.01); H05K 3/381 (2013.01); C04B 2235/72 (2013.01); C04B 2235/721 (2013.01); C04B 2235/723 (2013.01); C04B 2235/96 (2013.01); C04B 2237/121 (2013.01); C04B 2237/128 (2013.01); C04B 2237/368 (2013.01); C04B 2237/402 (2013.01); C04B 2237/52 (2013.01); C04B 2237/704 (2013.01); C04B 2237/706 (2013.01); C04B 2237/86 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/48227 (2013.01); H01L 2924/1305 (2013.01); H01L 2924/13055 (2013.01); H05K 1/0306 (2013.01); H05K 3/0029 (2013.01); H05K 3/0052 (2013.01); H05K 2201/0355 (2013.01); H05K 2201/0909 (2013.01); H05K 2201/09036 (2013.01); H05K 2203/095 (2013.01); Y10T 29/49155 (2015.01);
Abstract
Disclosed is a ceramic substrate including silicon in which the concentration of a silicon oxide and a silicon composite oxide in the surface thereof is less than or equal to 2.7 Atom %.