The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
Dec. 05, 2013
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Alexey Vasilyevitch Khvalkovskiy, Milpitas, CA (US);
Dmytro Apalkov, San Jose, CA (US);
Vladimir Nikitin, Campbell, CA (US);
Mohamad Towfik Krounbi, San Jose, CA (US);
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Abstract
A magnetic memory is described. In one aspect, the magnetic memory includes magnetic junctions and at least one semi-spin valve (SSV) line adjacent to the magnetic junctions. Each magnetic junction includes a magnetic free layer. The SSV line(s) include a ferromagnetic layer and a nonmagnetic layer between the ferromagnetic layer and the magnetic junctions. The SSV line(s) are configured to exert a spin accumulation induced torque on at least a portion of the magnetic junctions due to an accumulation of spin polarized current carriers from a current that is substantially in-plane. The free layer is configured to be written using at least the spin accumulation induced torque. In another aspect, the magnetic memory includes magnetic memory cells and at least one spin torque (ST) line that is analogous to the SSV line. Each magnetic memory cell includes magnetic junction(s) analogous to those above and magnetoelectric selection device(s).