The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
Jul. 29, 2013
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
In-jun Hwang, Hwaseong-si, KR;
Hyo-ji Choi, Seoul, KR;
Jong-seob Kim, Hwaseong-si, KR;
Jae-joon Oh, Seongnam-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Abstract
According to example embodiments, a high electron mobility transistor includes: a channel layer including a 2-dimensional electron gas (2DEG); a contact layer on the channel layer; a channel supply layer on the contact layer; a gate electrode on a portion of the channel layer; and source and drain electrodes on at least one of the channel layer, the contact layer, and the channel supply layer. The contact layer is configured to form an ohmic contact on the channel layer. The contact layer is n-type doped and contains a Group III-V compound semiconductor. The source electrode and the drain electrode are spaced apart from opposite sides of the gate electrode.