The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 07, 2015
Filed:
May. 27, 2014
Globalfoundries Inc., Grand Cayman, KY;
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Abstract
A semiconductor device includes a recess defined in a dielectric layer and an interconnect structure defined in the recess. The interconnect structure includes a first barrier layer lining the recess, the first barrier layer including an alloy of tantalum and a first transition metal other than tantalum, wherein a first interface between the first barrier layer and the dielectric layer has a first stress level. A second barrier layer is positioned on the first barrier layer, the second barrier layer including at least one of tantalum and tantalum nitride, wherein a second interface between the second barrier layer and the first barrier layer has a second stress level that is less than the first stress level. The interconnect structure further includes a fill material substantially filling the recess.