The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 07, 2015

Filed:

Apr. 03, 2012
Applicant:

Michito Sato, Nishishirakawa, JP;

Inventor:

Michito Sato, Nishishirakawa, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 21/78 (2006.01); H01L 29/34 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/34 (2013.01); H01L 21/02024 (2013.01); H01L 21/0201 (2013.01);
Abstract

A semiconductor wafer having sag formed at an outer periphery at the time of polishing, wherein a displacement of the semiconductor wafer in a thickness direction is 100 nm or less between a center and a outer peripheral sag start position of the semiconductor wafer, and the center of the semiconductor wafer has a convex shape, an amount of outer peripheral sag of the semiconductor wafer is 100 nm or less, and the outer peripheral sag start position is away from an outer peripheral portion of the semiconductor wafer toward the center or 20 mm or more away from an outer peripheral end of the semiconductor wafer toward the center, the outer peripheral portion being a measurement target of ESFQR.


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