The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2015
Filed:
Oct. 15, 2013
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Inventors:
Jhun Hua Chen, Chang Hua, TW;
Yu-Lung Tung, Kaohsiung, TW;
Chi-Tien Chen, New Taipei, TW;
Hua-Tai Lin, Hsinchu, TW;
Hsiang-Lin Chen, Hsinchu, TW;
Hung-Chang Hsieh, Hsinchu, TW;
Yi-Fan Chen, New Taipei, TW;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8242 (2006.01); H01L 23/528 (2006.01); H01L 21/8238 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 21/823871 (2013.01); H01L 21/76897 (2013.01); H01L 21/8238 (2013.01); H01L 21/31144 (2013.01);
Abstract
A semiconductor device includes a semiconductor substrate, a first active region in the semiconductor substrate, and a second active region in the semiconductor substrate. The semiconductor device further includes a first conductive line over the semiconductor substrate electrically connected to the first active region and having a first end face adjacent to the second active region, and the first end face having an image log slope of greater than 15 μm.