The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2015
Filed:
Dec. 24, 2012
Applicant:
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Inventors:
Lee-Te Tseng, Hsinchu, TW;
Chih-Hsien Ou, Taipei, TW;
Kun-Hsiang Lin, Taipei, TW;
Yi-Hann Chen, Hsinchu, TW;
Ming-Te Chen, Hsinchu, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/66 (2006.01);
U.S. Cl.
CPC ...
H01L 22/12 (2013.01); H01L 22/26 (2013.01); H01L 2924/0002 (2013.01);
Abstract
Among other things, a system and method for adjusting the intensity of a laser beam applied to a semiconductor device are provided for herein. A sensor is configured to measure the intensity of a laser beam reflected from the semiconductor device. Based upon the reflection intensity, an intensity of the laser beam that is applied to the semiconductor device is adjusted, such as to alter an annealing operation performed on the semiconductor device, for example.