The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2015
Filed:
Sep. 13, 2013
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Tzu-Jui Wang, Kaohsiung, TW;
Keng-Yu Chou, Kaohsiung, TW;
Chun-Hao Chuang, Hsinchu, TW;
Ming-Chieh Hsu, Hsinchu, TW;
Yuichiro Yamashita, Hsinchu, TW;
Jen-Cheng Liu, Hsinchu, TW;
Dun-Nian Yaung, Taipei, TW;
Taiwan Semiconductor Manufacturing Company Limited, Hsinchu, TW;
Abstract
A method for forming a photo diode is provided. The method includes: forming a first bottom electrode corresponding to a first pixel and a second bottom electrode corresponding to a second pixel over a substrate; forming a dielectric layer over the substrate; patterning the dielectric layer over the substrate; forming a photo conversion layer over the substrate; and forming a top electrode over the photo conversion layer; forming a color filter layer over the top electrode, wherein at least a portion of the dielectric layer separates a first portion of the color filter layer corresponding to a first pixel from a second portion of the color filer layer corresponding to a second pixel, and a refractive index of the dielectric layer is lower than a refractive index of the color filter layer.