The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2015
Filed:
May. 13, 2013
Applicant:
United Microelectronics Corp., Hsinchu, TW;
Inventors:
Chin-I Liao, Tainan, TW;
Chin-Cheng Chien, Tainan, TW;
Assignee:
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66636 (2013.01); H01L 21/02532 (2013.01); H01L 21/0251 (2013.01); H01L 21/02579 (2013.01); H01L 21/0262 (2013.01); H01L 21/02636 (2013.01);
Abstract
A manufacturing method of a semiconductor device is provided. The method includes at least the following steps. A gate structure is formed on a substrate. An epitaxial structure is formed on the substrate, wherein the epitaxial structure comprises SiGe, and the Ge concentration in the epitaxial structure is equal to or higher than 45%. A first cap layer is formed on the epitaxial structure, wherein the first cap layer comprises Si. The first cap layer is doped with boron for forming a flat top surface of the first cap layer.