The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2015
Filed:
Dec. 20, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Chung-Hsi Wu, Ttaichung, TW;
Han-Wen Liao, Taichung, TW;
Chih-Yu Lin, Tainan, TW;
Cherng-Chang Tsuei, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method for patterning a wafer includes performing a first patterning on a wafer, and after performing the first patterning, calculating a simulated dose mapper (DoMa) map predicting a change in critical dimensions of the wafer due to performing a second patterning on the wafer. The method further includes performing the second patterning on the wafer. Performing the second patterning includes adjusting one or more etching parameters of the second patterning in accordance with differences between the simulated DoMa map and desired critical dimensions of the wafer.