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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9064688 B1

PDFFull Text
Date of Patent:
Jun. 23, 2015

Filed:

Mar. 22, 2012

Performing enhanced cleaning in the formation of mos devices

Applicants:

Yu-hung Cheng, Hsin-Chu, TW;

Wu-ping Huang, Hsin-Chu, TW;

Chii-horng LI, Zhubei, TW;

Tze-liang Lee, Hsin-Chu, TW;

Inventors:

Yu-Hung Cheng, Hsin-Chu, TW;

Wu-Ping Huang, Hsin-Chu, TW;

Chii-Horng Li, Zhubei, TW;

Tze-Liang Lee, Hsin-Chu, TW;

Assignee:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Attorney:

Slater & Matsil, L.L.P.

Primary Examiner:

Mamadou Diallo

Assistant Examiner:

Jay C Chang

Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/76 (2006.01); H01L 21/311 (2006.01); H01L 21/302 (2006.01); H01L 21/461 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02057 (2013.01); H01L 21/02661 (2013.01); H01L 21/3065 (2013.01); H01L 21/823412 (2013.01); H01L 21/823425 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/02381 (2013.01); H01L 21/0243 (2013.01); H01L 21/02532 (2013.01); H01L 21/02639 (2013.01); H01L 29/66636 (2013.01); H01L 29/7848 (2013.01); H01L 29/165 (2013.01);
Abstract

A method includes etching a semiconductor substrate to form a recess, wherein the recess extends from a top surface of the semiconductor substrate into the semiconductor substrate. An enhanced cleaning is then performed to etch exposed portions of the semiconductor substrate. The exposed portions are in the recess. The enhanced cleaning is performed using process gases including hydrochloride (HCl) and germane (GeH). After the enhanced cleaning, an epitaxy is performed to grow a semiconductor region in the recess.

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