The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2015
Filed:
Jan. 24, 2012
Xia LI, San Diego, CA (US);
Xiaochun Zhu, San Diego, CA (US);
Seung H. Kang, San Diego, CA (US);
Jung Pill Kim, San Diego, CA (US);
Wah Nam Hsu, San Diego, CA (US);
Taehyun Kim, San Diego, CA (US);
Kangho Lee, San Diego, CA (US);
Xia Li, San Diego, CA (US);
Xiaochun Zhu, San Diego, CA (US);
Seung H. Kang, San Diego, CA (US);
Jung Pill Kim, San Diego, CA (US);
Wah Nam Hsu, San Diego, CA (US);
Taehyun Kim, San Diego, CA (US);
Kangho Lee, San Diego, CA (US);
QUALCOMM Incorporated, San Diego, CA (US);
Abstract
A two-transistor one-MTJ (2T1MTJ) three port structure includes two separate pin layer structures coupled to one free layer structure. The pin layer structures may include an anti-ferromagnetic layer (AFM) layer coupled to a pin layer. The free layer structure includes free layer coupled to a barrier layer and a cap layer. The free layer structure may include a thin barrier layer coupled to each of the pin layer stacks. The three port MTJ structure provides separate write and read paths which improve read sensing margin without increasing write voltage or current. The three port MTJ structure may be fabricated with a simple two step MTJ etch process.