The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 23, 2015
Filed:
Oct. 07, 2013
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Fabio Pellizzer, Cornate d'Adda, IT;
Roberto Bez, Milan, IT;
Ferdinando Bedeschi, Biassono, IT;
Roberto Gastaldi, Agrate Brianza, IT;
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 11/56 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0004 (2013.01); G11C 11/56 (2013.01); G11C 11/5678 (2013.01); G11C 13/004 (2013.01); G11C 2013/0054 (2013.01); G11C 2213/79 (2013.01); H01L 27/2427 (2013.01); H01L 27/2463 (2013.01); H01L 45/04 (2013.01); H01L 45/06 (2013.01); H01L 45/1233 (2013.01); H01L 45/126 (2013.01); H01L 45/143 (2013.01); H01L 45/144 (2013.01);
Abstract
A phase change memory device with memory cells is formed from a phase change memory element and a selection switch. A reference cell is formed from a similar phase change memory element and an associated selection switch and is associated to a group of memory cells to be read. An electrical quantity of the group of memory cells is compared with an analogous electrical quantity of the reference cell, thereby compensating for drift in the properties of the memory cells.