The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2015
Filed:
Mar. 01, 2013
Applicant:
Globalfoundries Singapore Pte. Ltd., Singapore, SG;
Inventors:
Da-Wei Lai, Singapore, SG;
Mahadeva Iyer Natarajan, Clifton Park, NY (US);
Assignee:
GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore, SG;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H 9/04 (2006.01);
U.S. Cl.
CPC ...
H02H 9/046 (2013.01);
Abstract
An acceptable voltage margin between a voltage level for triggering electrostatic current discharge and a voltage level for programming operation of an OTP device is determined. Activation of an ESD protection circuit is controlled in part in response to a false trigger prevention circuit. To avoid gate oxide breakdown that may occur with a MOSFET protection device used for higher voltage requirements of an OTP device, the ESD protection circuit employs a bipolar transistor.