The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 16, 2015

Filed:

Sep. 11, 2013
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

David L. Harame, Essex Junction, VT (US);

Stephen E. Luce, Underhill, VT (US);

Anthony K. Stamper, Williston, VT (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 21/70 (2006.01); H01L 41/09 (2006.01); G06F 17/50 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H03H 3/02 (2006.01); H03H 9/10 (2006.01); H03H 9/17 (2006.01); H01L 41/332 (2013.01); H03H 1/00 (2006.01); H03H 9/15 (2006.01);
U.S. Cl.
CPC ...
H01L 41/094 (2013.01); G06F 17/5068 (2013.01); H01L 21/84 (2013.01); H01L 27/1203 (2013.01); H03H 3/02 (2013.01); H03H 9/1007 (2013.01); H03H 9/173 (2013.01); H03H 2001/0064 (2013.01); H03H 2003/027 (2013.01); H03H 2009/155 (2013.01); H01L 41/332 (2013.01);
Abstract

Bulk acoustic wave filters and/or bulk acoustic resonators integrated with CMOS devices, methods of manufacture and design structure are provided. The method includes forming a single crystalline beam from a silicon layer on an insulator. The method further includes providing a coating of insulator material over the single crystalline beam. The method further includes forming a via through the insulator material. The method further includes providing a sacrificial material in the via and over the insulator material. The method further includes providing a lid on the sacrificial material. The method further includes providing further sacrificial material in a trench of a lower wafer. The method further includes bonding the lower wafer to the insulator, under the single crystalline beam. The method further includes venting the sacrificial material and the further sacrificial material to form an upper cavity above the single crystalline beam and a lower cavity, below the single crystalline beam.


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