The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 16, 2015
Filed:
Feb. 22, 2013
Nippon Micrometal Corporation, Iruma-Shi, Saitama, JP;
Waseda University, Tokyo, JP;
NIPPON MICROMETAL CORPORATION, Iruma-Shi, JP;
WASEDA UNIVERSITY, Tokyo, JP;
Abstract
It is an object of the present invention to provide a power semiconductor device, which is capable of being operable regardless of thermal stress generation, reducing a heat generation from wire, securing the reliability of bonding portion when the device is used for dealing with a large amount current and/or under a high temperature atmosphere, a method of manufacturing the device and a bonding wire. In a power semiconductor device in which a metal electrode (die electrode) on a power semiconductor dieand another metal electrode (connection electrode) are connected by metal wireusing wedge bonding connection, the metal wire is Ag or Ag alloy wire of which diameter is greater than 50 μm and not greater than 2 mm and the diehas thereon one or more metal and/or alloy layers, each of the layer(s) being 50 Å or more in thickness and a metal for the layer is selected from Ni, Cr, Cu, Pd, V, Ti, Pt, Zn, Ag, Au, W and Al.