The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2015
Filed:
May. 16, 2012
Soo-yeon Jeong, Hwaseong-si, KR;
In-ho Kim, Suwon-si, KR;
Hyung-yong Kim, Cheongju-si, KR;
Myeong-cheol Kim, Suwon-si, KR;
Soo-yeon Jeong, Hwaseong-si, KR;
In-ho Kim, Suwon-si, KR;
Hyung-yong Kim, Cheongju-si, KR;
Myeong-cheol Kim, Suwon-si, KR;
Abstract
In a method of fabricating a semiconductor device, a target layer and a first material layer are sequentially formed on a substrate. A plurality of second material layer patterns are formed on the first material layer, the second material layer patterns extending in a first horizontal direction. A plurality of hardmask patterns extending in a second horizontal direction are formed on the plurality of second material layer patterns and the first material layer, wherein the second horizontal direction is different from the first horizontal direction. A first material layer pattern is formed by etching the first material layer using the plurality of hardmask patterns and the plurality of second material layer patterns as etch masks. A target layer pattern with a plurality of holes is formed by etching the target layer using the first material layer pattern as an etch mask.