The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 09, 2015
Filed:
Oct. 23, 2013
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventors:
Dong-Chan Kim, Anyang-si, KR;
Tai-Su Park, Seoul, KR;
Ju-Eun Kim, Hwaseong-si, KR;
Ki-Hong Nam, Seongnam-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/28 (2006.01); H01L 29/51 (2006.01); H01L 21/02 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28185 (2013.01); H01L 21/28194 (2013.01); H01L 29/513 (2013.01); H01L 29/517 (2013.01); H01L 27/10814 (2013.01); H01L 27/10876 (2013.01); H01L 27/10888 (2013.01); H01L 21/02164 (2013.01); H01L 21/0228 (2013.01);
Abstract
A method of fabricating a semiconductor device includes forming a trench in a substrate, forming a pre-gate insulating film along side surfaces and a bottom surface of the trench, and oxidizing the pre-gate insulating film through a densification process.