The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2015
Filed:
Jul. 31, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Clement Hsingjen Wann, Carmel, NY (US);
Ling-Yen Yeh, Hsinchu, TW;
Chi-Wen Liu, Hsin-Chu, TW;
Chi-Yuan Shih, Hsin-Chu, TW;
Li-Chi Yu, Jhubei, TW;
Meng-Chun Chang, Taipei, TW;
Ting-Chu Ko, Hsin-Chu, TW;
Chung-Hsien Chen, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The disclosure relates to a semiconductor device. An exemplary structure for a contact structure for a semiconductor device comprises a substrate comprising a major surface; a fin structure extending upward from the substrate major surface, wherein the fin structure comprises a first fin, a second fin, and a third fin between the first fin and second fin; a first germanide over the first fin, wherein a first bottom surface of the first germanide has a first acute angle to the major surface; a second germanide over the second fin on a side of the third fin opposite to first germanide substantially mirror-symmetrical to each other; and a third germanide over the third fin, wherein a third bottom surface of the third germanide has a third acute angle to the major surface less than the first acute angle.