The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 02, 2015

Filed:

Oct. 25, 2012
Applicant:

Samsung Electro-mechanics Co., Ltd., Gyunggi-do, KR;

Inventors:

Do-Jae Yoo, Gyeonggi-do, KR;

Jae-Cheon Doh, Gyeonggi-do, KR;

Assignee:

Samsung Electro-Mechanics Co., Ltd., Suwon, Gyunggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 23/31 (2006.01); H01L 23/552 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/3121 (2013.01); H01L 23/552 (2013.01); H01L 24/16 (2013.01); H01L 24/29 (2013.01); H01L 24/73 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/291 (2013.01); H01L 2224/73253 (2013.01); H01L 2924/19107 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/19105 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/1815 (2013.01);
Abstract

A semiconductor package and a method of manufacturing the semiconductor package are disclosed. A semiconductor package in accordance with an embodiment of the present invention includes a substrate, which has a ground circuit formed thereon, a semiconductor chip, which is mounted on the substrate, a conductive first shield, which is formed on an upper surface of the semiconductor chip and connected with the ground circuit, and a conductive second shield, which covers the substrate and the semiconductor chip and is connected with the first shield. With a semiconductor package in accordance with an embodiment of the present invention, grounding is possible between semiconductor chips because a shield is also formed on an upper surface of the semiconductor chip, and the shielding property can be improved by a double shielding structure.


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