The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 26, 2015

Filed:

Jun. 26, 2014
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Yvonne Lin, Saratoga, CA (US);

Wen-Ting Chu, Kaohsiung County, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); H01L 27/115 (2006.01); H01L 29/94 (2006.01); H01L 49/02 (2006.01); G11C 16/08 (2006.01); G11C 29/00 (2006.01); H01L 27/06 (2006.01); G11C 16/04 (2006.01); H01L 27/08 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11526 (2013.01); H01L 29/94 (2013.01); H01L 27/0802 (2013.01); H01L 28/60 (2013.01); G11C 16/08 (2013.01); G11C 29/82 (2013.01); H01L 27/0629 (2013.01); G11C 16/0408 (2013.01);
Abstract

An integrated circuit includes at least one memory array and at least one capacitor array over a substrate. The at least one capacitor array includes a plurality of capacitor cell structures. The capacitor cell structures of the plurality of cell structures comprise a first capacitor electrode over the substrate. A second capacitor electrode is over the first capacitor electrode. A third capacitor electrode is adjacent to first sidewalls of the first and second capacitor electrodes. A fourth capacitor electrode is adjacent to second sidewalls of the first and second capacitor electrodes. A fifth capacitor electrode is over the substrate and adjacent to the fourth capacitor electrode.


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